document number: 81959 for technical questi ons, contact: optocoupler.answers@vishay.com www.vishay.com rev. 1.0, 02-dec-08 1 optocoupler, photodarlington output, dual channel, soic-8 package vod223t vishay semiconductors description the vod233t is a high current transfer ratio (ctr) optocoupler. it has a gallium arsenide infrared led emitter and silicon npn photodarli ngton transistor detector. this device has ctrs tested at an led current of 1 ma. this low drive current permits easy interfacing from cmos to lsttl or ttl. features ? high current transfer ratio at i f = 1 ma, 500 % minimum ? isolation test voltage, 4000 v rms ? lead (pb)-free component ? component in accordance to rohs 2002/95/ec and weee 2002/96/ec agency approvals ? ul1577, file no. e52744 system code y ? cul - file no. e52744, equivalent to csa bulletin 5a ? din en 60747-5-5 (vde 0884) available with option 1 notes (1) t amb = 25 c, unless otherwise specified stresses in excess of the absolute maximu m ratings can cause permanent damage to the device. functional oper ation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. exposure to abs olute maximum ratings for extended periods of the ti me can adversely affect reliability. (2) refer to reflow profile for soldering condit ions for surface mount ed devices (sop/soic). i179042 a1 c 2 a3 c4 8 c 7e 6c 5e order information part remarks vod223t ctr > 500 %, soic-8 absolute maximum ratings (1) parameter test condition symbol value unit input peak reverse voltage v r 6v peak pulsed current 1 s, 300 pps i fm 3a continuous forward current per channel i f 30 ma power dissipation p diss 45 mw derate linearly from 25 c 0.4 mw/c output collector emitter breakdown voltage bv ceo 30 v emitter collector breakdown voltage bv eco 5v power dissipation per channel p diss 75 mw derate linearly from 25 c 3.1 mw/c coupler isolation test voltage t = 1 s v iso 4000 v rms total package dissipation (2 leds and 2 detectors, 2 channels) p tot 250 mw derate linearly from 25 c 2mw/c storage temperature t stg - 40 to + 150 c operating temperature t amb - 40 to + 100 c soldering temperature (2) t sld 260 c
www.vishay.com for technical questions, contact: optocoupler.answers@vishay.com document number: 81959 2 rev. 1.0, 02-dec-08 vod223t vishay semiconductors optocoupler, photodarlington output, dual channel, soic-8 package note t amb = 25 c, unless otherwise specified minimum and maximum values are testing requi rements. typical values ar e characteristics of the device and are the result of eng ineering evaluation. typical values are for information only and are not part of the testing requirements. fig. 1 - switching test circuit electrical characteristics parameter test condition symbol min. typ. max. unit input forward voltage i f = 10 ma v f 1.3 v reverse current v r = 6 v i r 0.1 100 a capacitance v f = 0 v, f = 1 mhz c o 25 pf output collector emitter breakdown voltage i c = 100 a bv ceo 30 v emitter collector breakdown voltage i c = 10 a bv eco 5v collector emitter leakage current v ce = 5 v, i f = 0 a i ceo 50 na collector emitter capacitance v ce = 5 v c ce 3.4 pf saturation voltage, collector emitter i f = 1 ma, i ce = 0.5 ma v cesat 1v coupler capacitance (input to output) c io 0.5 pf current transfer ratio parameter test condition symbol min. typ. max. unit dc current transfer ratio i f = 1 ma, v ce = 5 v ctr dc 500 % switching characteristics parameter test condition symbol min. typ. max. unit turn-on time v cc = 10 v, r l = 100 , i f = 5 ma t on 15 s turn-off time v cc = 10 v, r l = 100 , i f = 5 ma t off 30 s iild223t_09 i f t rise v o t fall t on t off 10 % 90 % 50 % v o r l v cc = 10 v i f = 5 ma f = 10 khz, df = 50 %
document number: 81959 for technical questi ons, contact: optocoupler.answers@vishay.com www.vishay.com rev. 1.0, 02-dec-08 3 vod223t optocoupler, photodarlington output, dual channel, soic-8 package vishay semiconductors note as per iec 60747-5-2, 7.4.3.8.1, this optoc oupler is suitable for ?safe electrical insulation? only within the safety ratings. compliance with the safety ratings shall be ensured by means of prodective circuits. typical characteristics t amb = 25 c, unless otherwise specified fig. 2 - forward voltage vs. forward current fi g. 3 - peak led current vs. duty factor, safety and insulation ratings parameter test condition symbol min. typ. max. unit climatic classification (according to iec 68 part 1) 40/100/21 polution degree 2 comparative tracking index cti 175 399 isolation test voltage 1 s v iso 4000 v rms peak transient overvoltage v iotm 6000 v peak insulation voltage v iorm 560 v safety rating - power output p so 350 mw resistance (input to output) r io 100 g apparent charge method a q pd c apparent charge method b q pd c safety rating - input current i si 150 ma safety rating - temperature t si 165 c external creepage distance 4 mm internal creepage distance 4 mm external clearance distance 4 mm insulation thickness 0.2 mm iild223t_01 100 10 1 .1 0.7 0. 8 0.9 1.0 1.1 1.2 1.3 1.4 i f - for w ard c u rrent (ma) v f - for w ard v oltage ( v ) t a = - 55 c t a = 100 c t a = 25 c 0 iild223t_02 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 100 1000 10 000 t - led p u lse d u ration (s) i f(pk) - peak led c u rrent (ma) 0.005 0.05 0.02 0.01 0.1 0.2 0.5 d u ty factor t df= / t
www.vishay.com for technical questions, contact: optocoupler.answers@vishay.com document number: 81959 4 rev. 1.0, 02-dec-08 vod223t vishay semiconductors optocoupler, photodarlington output, dual channel, soic-8 package fig. 4 - normalized ctr ce vs. led current fig. 5 - ctr vs. led current fig. 6 - collector current vs. led current package dimensions in inches (millimeters) 1000 0.1 1 10 100 100 10 1 ta = - 20 c ta = 25 c ta = 50 c ta = 70 c n ormalized to: if = 1 ma, v ce = 5 v ta = 25 c 0.1 1 10 100 iild223t_03 n ormalized ctr ce t am b = - 20 c t am b = 25 c t am b = 50 c t am b = 70 c n ormalized to: i f = 1 ma, v ce = 5 v t am b = 25 c i f - led c u rrent (ma) 2000 0.1 1 10 100 iild223t_04 1500 1000 500 0 ctr ce - c u rrent transfer ratio ( % ) t am b = - 20 c t am b = 25 c t am b = 50 c t am b = 70 c v ce = 5 v i f - led c u rrent (ma) 100 0.1 1 10 100 iild223t_05 10 1 0.1 i ce - collector c u rrent (ma) t am b = - 20 c t am b = 25c t am b = 50c t am b = 70 c v ce = 5 v i f - led c u rrent (ma) 0.036 (0.91) 0.014 (0.36) 0.170 (4.32) 0.045 (1.14) 0.260 (6.6) r 0.010 (0.13) 0.050 (1.27) i17 8 020 iso method a 40 0.240 (6.10) 0.050 (1.27) typ. 0.016 (0.41) 0.004 (0.10) 0.00 8 (0.20) lead coplanarity 0.001 max. 0.00 8 (0.20) 7 0.120 0.002 (3.05 0.05) c l r 0.010 (0.25) max. 0.040 (1.02) 5 max. pin one i.d. 0.154 0.002 (3.91 0.05) 0.015 0.002 (0.3 8 0.05) 0.230 0.002 (5. 8 4 0.05) 0.020 0.004 (0.51 0.10) 2 plcs. 0.05 8 5 0.002 (1.49 0.05) 0.125 0.002 (3.1 8 0.05)
document number: 81959 for technical questi ons, contact: optocoupler.answers@vishay.com www.vishay.com rev. 1.0, 02-dec-08 5 vod223t optocoupler, photodarlington output, dual channel, soic-8 package vishay semiconductors ozone depleting substa nces policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve t he performance of our products, processes, distribution and o perating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances in to the atmosphere whic h are known as ozone depleting substances (odss). the montreal protocol (1987) a nd its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. vari ous national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of co ntinuous improvements to elim inate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively. 2. class i and ii ozone depleting substances in the clean air ac t amendments of 1990 by the environmental protection agency (epa) in the usa. 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify t hat our semiconductors are not manufactured with ozone dep leting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating para meters must be validated for each customer application by the customer. should the buyer use vishay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, dam ages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death as sociated with such unint ended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany
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